IPB80N06S2L-H5 Image

IPB80N06S2L-H5

Product Category : FETs - Single

Description : MOSFET N-CH 55V 80A TO263-3

Marketing Price : N/A

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPB80N06S2L-H5.pdf

Condition : New

Country Of Origin : -

Availability of IPB80N06S2L-H5
  • Available Quantity : 12500 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : sales@buy-inf.com
EIS is the stocking distributor of IPB80N06S2L-H5, we specialize in all series Infineon Technologies components. IPB80N06S2L-H5 can be shipped within 24 hours after order. If you have any demands for IPB80N06S2L-H5. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.
Internal Part NumberEIS-IPB80N06S2L-H5
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab/Test Site Addition 16/Oct/2014
Wafer Fab/Test Site Addition 15/Dec/2014
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) @ Vgs190nC @ 10V
Input Capacitance (Ciss) @ Vds5000pF @ 25V
Power - Max300W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB80N06S2L-H5
Related LinksIPB80N0, IPB80N06S2L-H5 Datasheet
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