Home » All Products » Discrete Semiconductor Products » FETs - Single » IPP80N06S2L-09
Product Category : FETs - Single
Description : MOSFET N-CH 55V 80A TO220-3
Marketing Price : N/A
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : 
IPP80N06S2L-09.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPP80N06S2L-09 | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Assembly/Origin | Wafer Fab/Test Site Addition 16/Oct/2014 Wafer Fab/Test Site Addition 15/Dec/2014 | |
| Standard Package | 500 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | OptiMOS™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 52A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 125µA | |
| Gate Charge (Qg) @ Vgs | 105nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2620pF @ 25V | |
| Power - Max | 190W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | PG-TO220-3-1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPP80N06S2L-09 | |
| Related Links | IPP80N0, IPP80N06S2L-09 Datasheet | |
