Product Category : FETs - Single
Description : MOSFET N-CH 650V 31.2A TO247
Marketing Price : $ 3.63
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPW65R110CFD.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPW65R110CFD | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 240 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | CoolMOS™ | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | |
Gate Charge (Qg) @ Vgs | 118nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 3240pF @ 100V | |
Power - Max | 277.8W | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | PG-TO247-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPW65R110CFD | |
Related Links | IPW65R, IPW65R110CFD Datasheet |