
Product Category : FETs - Single
Description : MOSFET N-CH 650V 31.2A TO247
Marketing Price : $ 3.63
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet :
IPW65R110CFD.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPW65R110CFD | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 240 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | CoolMOS™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | |
| Gate Charge (Qg) @ Vgs | 118nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3240pF @ 100V | |
| Power - Max | 277.8W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | PG-TO247-3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPW65R110CFD | |
| Related Links | IPW65R, IPW65R110CFD Datasheet | |