Product Category : FETs - Single
Description : MOSFET N-CH 650V 3.2A TO-251
Marketing Price : $ 0.39
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPS65R1K4C6AKMA1.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPS65R1K4C6AKMA1 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | CoolMOS™ | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) | |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 100µA | |
Gate Charge (Qg) @ Vgs | 10.5nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 225pF @ 100V | |
Power - Max | - | |
Mounting Type | Through Hole | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Supplier Device Package | PG-TO251-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPS65R1K4C6AKMA1 | |
Related Links | IPS65R1K, IPS65R1K4C6AKMA1 Datasheet |