Product Category : FETs - Single
Description : MOSFET N-CH 100V 69A TO251-3-11
Marketing Price : N/A
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPS12CN10L G.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPS12CN10L G | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | Multiple Devices 26/Jul/2012 | |
Standard Package | 1,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tube | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 69A (Tc) | |
Rds On (Max) @ Id, Vgs | 11.8 mOhm @ 69A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 83µA | |
Gate Charge (Qg) @ Vgs | 58nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 5600pF @ 50V | |
Power - Max | 125W | |
Mounting Type | Through Hole | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Supplier Device Package | PG-TO251-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPS12CN10L G | |
Related Links | IPS12C, IPS12CN10L G Datasheet |