Product Category : FETs - Single
Description : MOSFET N-CH 650V 11.1A 4VSON
Marketing Price : $ 1.22
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : 
IPL60R299CP.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPL60R299CP | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 3,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | CoolMOS™ | |
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Tc) | |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA | |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V | |
| Power - Max | 96W | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-TSFN Exposed Pad | |
| Supplier Device Package | PG-VSON-4 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPL60R299CP | |
| Related Links | IPL60, IPL60R299CP Datasheet | |
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