IPI086N10N3 G

Product Category : FETs - Single

Description : MOSFET N-CH 100V 80A TO262-3

Marketing Price : $ 0.62

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPI086N10N3 G.pdf

Condition : New

Country Of Origin : -

Availability of IPI086N10N3 G

Available Quantity : 12500 Pieces
Date code : Newest
Delivery Time : Ship within 1 day if urgen
Shipping Methods : FEDEX DHL UPS
Manufacturer lead time : 8-10 Weeks
Payment Methods : Bank Transfer / Paypal
QUANTITY : Buy
Email : sales@buy-inf.com

EIS is the stocking distributor of IPI086N10N3 G, we specialize in all series Infineon Technologies components. IPI086N10N3 G can be shipped within 24 hours after order. If you have any demands for IPI086N10N3 G. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.

Internal Part Number	EIS-IPI086N10N3 G
Condition	New & Unused, Original Sealed
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Production Status (Lifecycle)	In Production
Condition	New & Unused, Original Sealed
Standard Package	500
Category	Discrete Semiconductor Products
Family	FETs - Single
Series	OptiMOS™
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	8.6 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) @ Vds	3980pF @ 50V
Power - Max	125W
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	PG-TO262-3
Weight	0.001 KG
Application	Email for details
Alternative Part (Replacement)	IPI086N10N3 G
Related Links	IPI086, IPI086N10N3 G Datasheet