Product Category : FETs - Single
Description : MOSFET N-CH 800V 5.7A TO252-3
Marketing Price : $ 0.52
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPD80R1K0CEBTMA1.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPD80R1K0CEBTMA1 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | CoolMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) | |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 3.6A, 10V | |
Vgs(th) (Max) @ Id | 3.9V @ 250µA | |
Gate Charge (Qg) @ Vgs | 31nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 785pF @ 100V | |
Power - Max | 83W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-4, DPak (3 Leads + Tab) | |
Supplier Device Package | TO-252-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPD80R1K0CEBTMA1 | |
Related Links | IPD80R1K, IPD80R1K0CEBTMA1 Datasheet |