IPD65R950CFDBTMA1 Image

IPD65R950CFDBTMA1

Product Category : FETs - Single

Description : MOSFET N-CH 650V 3.9A TO-252

Marketing Price : $ 0.51

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPD65R950CFDBTMA1.pdf

Condition : New

Country Of Origin : -

Availability of IPD65R950CFDBTMA1
  • Available Quantity : 14369 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : sales@buy-inf.com
EIS is the stocking distributor of IPD65R950CFDBTMA1, we specialize in all series Infineon Technologies components. IPD65R950CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R950CFDBTMA1. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.
Internal Part NumberEIS-IPD65R950CFDBTMA1
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesCoolMOS™
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Rds On (Max) @ Id, Vgs950 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 200µA
Gate Charge (Qg) @ Vgs14.1nC @ 10V
Input Capacitance (Ciss) @ Vds380pF @ 100V
Power - Max36.7W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD65R950CFDBTMA1
Related LinksIPD65R95, IPD65R950CFDBTMA1 Datasheet
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