Product Category : FETs - Single
Description : MOSFET N-CH 650V 11A TO252-3
Marketing Price : $ 1.49
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPD65R225C7ATMA1.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPD65R225C7ATMA1 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | CoolMOS™ C7 | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
Rds On (Max) @ Id, Vgs | 225 mOhm @ 4.8A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 240µA | |
Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 996pF @ 400V | |
Power - Max | 63W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | PG-TO252-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPD65R225C7ATMA1 | |
Related Links | IPD65R22, IPD65R225C7ATMA1 Datasheet |