Home » All Products » Discrete Semiconductor Products » FETs - Single » IPD65R1K4CFDBTMA1
Product Category : FETs - Single
Description : MOSFET N-CH 650V 2.8A TO-252
Marketing Price : $ 0.44
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : 
IPD65R1K4CFDBTMA1.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPD65R1K4CFDBTMA1 | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 | |
| PCN Part Status Change | Halogen Free Upgrade 22/Aug/2013 | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | CoolMOS™ | |
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 262pF @ 100V | |
| Power - Max | 28.4W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | PG-TO252-3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPD65R1K4CFDBTMA1 | |
| Related Links | IPD65R1K, IPD65R1K4CFDBTMA1 Datasheet | |
