Product Category : FETs - Single
Description : MOSFET N-CH 100V 67A TO252-3
Marketing Price : $ 0.66
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPD12CN10NGATMA1.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPD12CN10NGATMA1 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) | |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 67A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 83µA | |
Gate Charge (Qg) @ Vgs | 65nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 4320pF @ 50V | |
Power - Max | 125W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | PG-TO252-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPD12CN10NGATMA1 | |
Related Links | IPD12CN1, IPD12CN10NGATMA1 Datasheet |