Product Category : FETs - Single
Description : MOSFET N-CH 100V 80A TO252-3
Marketing Price : $ 0.59
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : IPD082N10N3GATMA1.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-IPD082N10N3GATMA1 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 73A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
Gate Charge (Qg) @ Vgs | 55nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 3980pF @ 50V | |
Power - Max | 125W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | PG-TO252-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | IPD082N10N3GATMA1 | |
Related Links | IPD082N1, IPD082N10N3GATMA1 Datasheet |