IPD082N10N3 G Image

IPD082N10N3 G

Product Category : FETs - Single

Description : MOSFET N-CH 100V 80A TO252-3

Marketing Price : $ 0.70

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPD082N10N3 G.pdf

Condition : New

Country Of Origin : -

Availability of IPD082N10N3 G
  • Available Quantity : 12500 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : sales@buy-inf.com
EIS is the stocking distributor of IPD082N10N3 G, we specialize in all series Infineon Technologies components. IPD082N10N3 G can be shipped within 24 hours after order. If you have any demands for IPD082N10N3 G. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.
Internal Part NumberEIS-IPD082N10N3 G
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds3980pF @ 50V
Power - Max125W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPD082N10N3 G
Related LinksIPD082, IPD082N10N3 G Datasheet
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