Home » All Products » Discrete Semiconductor Products » FETs - Single » IPB65R099C6ATMA1
Product Category : FETs - Single
Description : MOSFET N-CH 650V 38A TO263
Marketing Price : $ 4.70
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : 
IPB65R099C6ATMA1.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPB65R099C6ATMA1 | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | CoolMOS™ | |
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | |
| Rds On (Max) @ Id, Vgs | 99 mOhm @ 12.8A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA | |
| Gate Charge (Qg) @ Vgs | 127nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2780pF @ 100V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPB65R099C6ATMA1 | |
| Related Links | IPB65R09, IPB65R099C6ATMA1 Datasheet | |
