IPB083N10N3 G

Product Category : FETs - Single

Description : MOSFET N-CH 100V 80A TO263-3

Marketing Price : $ 0.43

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPB083N10N3 G.pdf

Condition : New

Country Of Origin : -

Availability of IPB083N10N3 G

Available Quantity : 15500 Pieces
Date code : Newest
Delivery Time : Ship within 1 day if urgen
Shipping Methods : FEDEX DHL UPS
Manufacturer lead time : 8-10 Weeks
Payment Methods : Bank Transfer / Paypal
QUANTITY : Buy
Email : sales@buy-inf.com

EIS is the stocking distributor of IPB083N10N3 G, we specialize in all series Infineon Technologies components. IPB083N10N3 G can be shipped within 24 hours after order. If you have any demands for IPB083N10N3 G. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.

Internal Part Number	EIS-IPB083N10N3 G
Condition	New & Unused, Original Sealed
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Production Status (Lifecycle)	In Production
Condition	New & Unused, Original Sealed
Standard Package	1,000
Category	Discrete Semiconductor Products
Family	FETs - Single
Series	OptiMOS™
Packaging	Tape & Reel (TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	8.3 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) @ Vds	3980pF @ 50V
Power - Max	125W
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-2
Weight	0.001 KG
Application	Email for details
Alternative Part (Replacement)	IPB083N10N3 G
Related Links	IPB083, IPB083N10N3 G Datasheet