IPB027N10N5ATMA1 Image

IPB027N10N5ATMA1

Product Category : FETs - Single

Description : MOSFET N-CH 100V 120A D2PAK-3

Marketing Price : $ 2.32

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : IPB027N10N5ATMA1.pdf

Condition : New

Country Of Origin : -

Availability of IPB027N10N5ATMA1
  • Available Quantity : 12500 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : sales@buy-inf.com
EIS is the stocking distributor of IPB027N10N5ATMA1, we specialize in all series Infineon Technologies components. IPB027N10N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB027N10N5ATMA1. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.
Internal Part NumberEIS-IPB027N10N5ATMA1
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 184µA
Gate Charge (Qg) @ Vgs139nC @ 10V
Input Capacitance (Ciss) @ Vds10300pF @ 50V
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB027N10N5ATMA1
Related LinksIPB027N1, IPB027N10N5ATMA1 Datasheet
IPB027N10N5ATMA1 Related Components
IGW50N65F5FKSA1

IGBT 650V 80A 305W PG-TO247-3

IFX25001TS V85

IC REG LDO 8.5V 0.4A TO220-3

PTF140451F V1

IC FET RF LDMOS 45W H-31265

BTS5180-2EKA

IC PWR SW HI-SIDE 2CH DSO14-40

SLE 66R35 MCC2

IC MEMORY CHIP 1KBYTE MCC2-2

IDD06E60

DIODE GEN PURP 600V 14.7A TO252

IPB79CN10N G

MOSFET N-CH 100V 13A TO263-3

ITS716G

IC SWITCH HISIDE SMART DSO-20

IDB18E120

DIODE GEN PURP 1.2KV 31A TO263-3

SPB80N03S2L-03 G

MOSFET N-CH 30V 80A D2PAK

BGA 751L7 E6327

IC AMP MMIC SGL-BAND LN TSLP7-1

ESD206B102ELE6327XTMA1

TVS DIODE 5.5VWM 9.6VC TSLP2-19