Home » All Products » Discrete Semiconductor Products » FETs - Single » IPB027N10N3 G
Product Category : FETs - Single
Description : MOSFET N-CH 100V 120A TO263-3
Marketing Price : $ 2.21
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : 
IPB027N10N3 G.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-IPB027N10N3 G | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | OptiMOS™ | |
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA | |
| Gate Charge (Qg) @ Vgs | 206nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 14800pF @ 50V | |
| Power - Max | 300W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263-2 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IPB027N10N3 G | |
| Related Links | IPB027, IPB027N10N3 G Datasheet | |
