Product Category : FETs - Single
Description : MOSFET N-CH 200V 660MA SOT-223
Marketing Price : N/A
Our Price : Quote by Email (sales@buy-inf.com)
Datasheet : BSP149 L6327.pdf
Condition : New
Country Of Origin : -
Internal Part Number | EIS-BSP149 L6327 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | SIPMOS® | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Depletion Mode | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) | |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V | |
Vgs(th) (Max) @ Id | 1V @ 400µA | |
Gate Charge (Qg) @ Vgs | 14nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 430pF @ 25V | |
Power - Max | 1.8W | |
Mounting Type | Surface Mount | |
Package / Case | TO-261-4, TO-261AA | |
Supplier Device Package | PG-SOT223-4 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSP149 L6327 | |
Related Links | BSP149, BSP149 L6327 Datasheet |