BSC019N02KS G Image

BSC019N02KS G

Product Category : FETs - Single

Description : MOSFET N-CH 20V 100A TDSON-8

Marketing Price : $ 0.83

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : BSC019N02KS G.pdf

Condition : New

Country Of Origin : -

Availability of BSC019N02KS G
  • Available Quantity : 12500 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : sales@buy-inf.com
EIS is the stocking distributor of BSC019N02KS G, we specialize in all series Infineon Technologies components. BSC019N02KS G can be shipped within 24 hours after order. If you have any demands for BSC019N02KS G. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.
Internal Part NumberEIS-BSC019N02KS G
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs1.95 mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 350µA
Gate Charge (Qg) @ Vgs85nC @ 4.5V
Input Capacitance (Ciss) @ Vds13000pF @ 10V
Power - Max104W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC019N02KS G
Related LinksBSC019, BSC019N02KS G Datasheet
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