BSB056N10NN3 G

Product Category : FETs - Single

Description : MOSFET N-CH 100V 9A WDSON-2

Marketing Price : $ 1.22

Our Price : Quote by Email (sales@buy-inf.com)

Datasheet : BSB056N10NN3 G.pdf

Condition : New

Country Of Origin : -

Availability of BSB056N10NN3 G

Available Quantity : 12500 Pieces
Date code : Newest
Delivery Time : Ship within 1 day if urgen
Shipping Methods : FEDEX DHL UPS
Manufacturer lead time : 8-10 Weeks
Payment Methods : Bank Transfer / Paypal
QUANTITY : Buy
Email : sales@buy-inf.com

EIS is the stocking distributor of BSB056N10NN3 G, we specialize in all series Infineon Technologies components. BSB056N10NN3 G can be shipped within 24 hours after order. If you have any demands for BSB056N10NN3 G. Please kindly send an inquiry by email. Our email is sales@buy-inf.com.

Internal Part Number	EIS-BSB056N10NN3 G
Condition	New & Unused, Original Sealed
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Production Status (Lifecycle)	In Production
Condition	New & Unused, Original Sealed
Standard Package	5,000
Category	Discrete Semiconductor Products
Family	FETs - Single
Series	OptiMOS™
Packaging	Tape & Reel (TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) @ Vgs	74nC @ 10V
Input Capacitance (Ciss) @ Vds	5500pF @ 50V
Power - Max	78W
Mounting Type	Surface Mount
Package / Case	3-WDSON
Supplier Device Package	MG-WDSON-2, CanPAK M™
Weight	0.001 KG
Application	Email for details
Alternative Part (Replacement)	BSB056N10NN3 G
Related Links	BSB056N, BSB056N10NN3 G Datasheet